Like urban planners
trying to
squeeze more residents onto a city block, chip makers are talking about ways to improve their products by building
upward rather than squeezing circuitry closer together. IBM and Micron plan to work together to commercialize the concept.
就像城市规划者试图让更多居民住进一个街区一样,芯片制造商都在谈论如何通过向上堆叠而不是将电路弄得越来越密集来改善他们的产品。国际商业机器公司(IBM)和美光科技公司(Micron)计划携手将这一概念商业化。
The
fundamental idea is to stack chips on top of each other, using more and faster data pathways than typically connect semiconductors in a system. Backers say the resulting stack, besides saving space, can deliver
performance akin to the
creation of a three-dimensional block of circuitry.
这一想法的基本理念是将芯片层层叠起,和传统上将一个系统中的半导体联系在一起的做法相比,新方法将用到更多且速度更快的数据通路。支持者认为,将芯片堆叠起来的做法除了节省空间,还能达到类似于立体电路块的效果。
IBM, which makes microprocessors in its own factories and offers chip-production services to others, has been refining the
concept with various partners. So has Micron, the sole U.S. company left that makes chips known as DRAMs, for dynamic
randomaccess memory.
IBM已经在和多位合作伙伴完善这一概念。美光科技公司也是如此。IBM在自己的工厂内生产微处理器,并向其它厂商提供芯片制造服务。而美光科技公司是美国仅剩的一家还在生产被称为动态随机存取内存(DRAMs)芯片的企业。
Under a collaboration between the two companies, Micron would
slightly modify some of its memory chips to remove circuitry that
normally connects them to other chips. Those functions would
essentially be taken over by a special IBM chip, which would be form the bottom layer below a stack of four or eight Micron memory chips.
两家公司合作之后,美光科技公司将稍稍改变部分内存芯片的设计,移除通常连接内存芯片和其它芯片的电路。这部分功能基本上将由一块特殊的IBM芯片取代。这块IBM芯片将位于底层,其上方可能堆叠四或八块美光的内存芯片。
Rather than
communicate through the standard wiring on the outside of packaging which draw signals off the edge of chips the data would flow vertically in the stack of chips using pathways called through-silicon vias. Prototypes of the approach pump some 128 gigabytes of data per second, the companies say, about 10 times more than memory chips typically send now.
按照新方法,数据将利用名为"穿透硅通孔"的通路垂直穿过堆叠的芯片,而不是像原来那样通过包装外部的标准接线从芯片边缘接受信号进行通讯。两家公司说,按照这种方法设计的原型芯片每秒能传输128G(千兆字节)左右的数据,这一速度大约比目前的内存芯片快了十倍。
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